Hf-Based and Zr-Based Charge Trapping Layer Engineering for E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack

E-mode hybrid ferroelectric charge storage gate (FEG) GaN HEMTs have shown promising performances for future power device applications. The FEG-HEMT demonstrates a combination of polarization and trapping process in the ferro-charge-storage stack, leading to positive threshold voltage shift operations. In this work, FEG-HEMTs with various Hf-based Zr-based layers are systematically studied. which employed nitrogen incorporated HfO2 (HfON) as layer shows an operation highest Vth (+2.3 V) after initialization. Moreover, leakage HfON sample was further reduced due incorporation, more complete charging during instability is also addressed investigated. showed negligible hysteresis (-43mV) stability both PBTI (positive bias instability) NBTI (negative test measurements.